Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs
1988; American Institute of Physics; Volume: 53; Issue: 22 Linguagem: Inglês
10.1063/1.100284
ISSN1520-8842
AutoresD.G. Deppe, W. E. Plano, J. E. Baker, N. Holonyak, M. J. Ludowise, Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski, M. G. Craford,
Tópico(s)Semiconductor materials and devices
ResumoThe diffusion of SiIII-SiV neutral pairs versus the diffusion of SiIII-VIII complexes in III-V crystals is compared in the light of experimental data showing the effect of Si diffusion on self-diffusion of column III and column V lattice atoms. Secondary-ion mass spectroscopy is used to compare the enhanced diffusion of column III or column V atoms in several different Si-diffused heterostructures closely lattice matched to GaAs. Enhancement of the lattice-atom self-diffusion, via impurity diffusion, is found to occur predominantly on the column III lattice. Supporting the SiIII-VIII diffusion model, these data indicate that the main native defects accompanying the Si diffusion are column III vacancies, which diffuse directly on the column III sublattice.
Referência(s)