Thickness dependence of optical parameters for Ge–Se–Te thin films
2007; Elsevier BV; Volume: 61; Issue: 23-24 Linguagem: Inglês
10.1016/j.matlet.2007.02.040
ISSN1873-4979
Autores Tópico(s)Nonlinear Optical Materials Studies
ResumoThe present work deals with thickness dependent study of the thin films of Ge10Se90 − xTex (x = 0, 10) chalcogenide glasses. Bulk samples of Ge10Se90 and Ge10Se80Te10 have been prepared by melt quenching technique. Thin films (thickness d = 800 nm and 1100 nm) of the prepared samples have been deposited on glass substrate using vacuum evaporation technique. The optical parameters i.e. optical band gap (Egopt), absorption coefficient (α), refractive index (n) and extinction coefficient (k) are calculated from the transmission spectrum in the range 400–1500 nm. The optical band gap decreases with the increase of thickness from 1.87 ± 0.01 eV (d = 800 nm) to 1.80 ± 0.01 eV (d = 1100 nm) for Ge10Se90 and from 1.62 ± 0.01 eV (d = 800 nm) to 1.48 ± 0.01 eV (d = 1100 nm) for Ge10Se80Te10 thin films.
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