Self-organized GaN/A1N hexagonal quantum-dots: strain distribution and electronic structure
2008; IOP Publishing; Volume: 17; Issue: 9 Linguagem: Inglês
10.1088/1674-1056/17/9/055
ISSN2058-3834
AutoresYumin Liu, Yu Zhong-Yuan, Xiaomin Ren, Xu Zi-Ruan,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThis paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AIN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AIN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.
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