A device analysis system based on laser scanning techniques
1980; Elsevier BV; Volume: 20; Issue: 5 Linguagem: Inglês
10.1016/0026-2714(80)90401-1
ISSN1872-941X
Autores Tópico(s)CCD and CMOS Imaging Sensors
ResumoThe organization of “A Device Analysis System Based on Laser Scanning Techniques” developed with the intention of measuring and analyzing the characteristics of the sample device, and the measured results with this system are presented. Since a sample-and-hold method for measurements of photoresponse current is employed, the dynamic (or static) photoresponse image can be obtained while the device under investigation is being operated in dynamic (or in static) and additionally, being checked on its functional operation with LSI evaluation unit. Images obtained are stored in digital image memories in real time and then processed with MPU in accordance with programs, in order to obtain the required information (ex. logic level of memory cell). And processed image(s) and laser reflected image superimposed on each other, are displayed on a color kinescope. As a result, even on dynamic type LSI such as dynamic MOS RAM, the logic levels of internal circuits could be successfully measured while in its dynamic operation, without contacting, in the atmospheric circumstance and moreover, in a nondestructive manner. In this report, measured results on a 4 K dynamic MOS RAM, CMOS shift register and a TTL logic IC are shown. This system is invaluable for the study of the operation of internal circuits not externally accessible and as an aid in testing with LSI tester and for failure analysis, at the stages of the design and the production. Besides, the resolution in depth could be improved by using an argon u.v. laser of shorter wavelength (λ = 351 nm, 364 nm) than HeNe laser (λ = 632.8 nm).
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