Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides
2011; American Institute of Physics; Volume: 98; Issue: 11 Linguagem: Inglês
10.1063/1.3567796
ISSN1520-8842
AutoresHyunsoo Kim, Kyoung‐Kook Kim, Sung‐Nam Lee, Jae‐Hyun Ryou, Russell D. Dupuis,
Tópico(s)ZnO doping and properties
ResumoWe report on low-resistance Ti (50 nm)/Au (80 nm) contacts to amorphous gallium indium zinc oxides (a-GIZO). The specific contact resistances obtained using the transmission line method were as low as 2.85×10−5 Ω cm2 when annealed at 500 °C for 1 min in N2 ambient. This could be attributed to the combined effects of structural relaxation of a-GIZO films at elevated temperatures, causing drastic increases in both electron concentration and Hall mobility, and to interfacial reactions between Ti/Au and a-GIZO layers producing oxygen vacancies near the surface.
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