Non-radiative recombination and luminescence in silicon
1979; Elsevier BV; Volume: 18-19; Linguagem: Inglês
10.1016/0022-2313(79)90078-4
ISSN1872-7883
Autores Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoAbstract The non-radiative free carrier recombination at high density in silicon is attributed to intrinsic , phonon assisted, Auger transitions which are discussed in connection with intrinsic luminescence. The bound exciton decay is due to phononless extrinsic Auger transitions. Quantitative understanding of this non-radiative recombination process is possible.
Referência(s)