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Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot

2009; American Institute of Physics; Volume: 94; Issue: 9 Linguagem: Inglês

10.1063/1.3086461

1520-8842

Jamie McFarlane, Paul A. Dalgarno, Brian D. Gerardot, Robert H. Hadfield, R. J. Warburton, K. Karraï, A. Badolato, P. M. Petroff,

Quantum Information and Cryptography

An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ∼1 μs. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.