Selective growth of high-quality 3C-SiC using a SiO 2 sacrificial-layer technique
1999; Elsevier BV; Volume: 345; Issue: 2 Linguagem: Inglês
10.1016/s0040-6090(99)00233-3
ISSN1879-2731
AutoresMartin Eickhoff, H.J. Möller, M. Rapp, G. Kroetz,
Tópico(s)Copper Interconnects and Reliability
ResumoAbstract The selectivity of a LPCVD growth process for cubic silicon carbide with respect to the underlying substrate was investigated, and a highly selective growth process on structured Si/SiO 2 substrates was found at temperatures above 1150°C. The temperature dependence of this effect was systematically studied. In the temperature range between 1075–1150°C, polycrystalline SiC was grown on SiO 2 surfaces. At temperatures above 1150°C, no growth on SiO 2 occurred, whereas high-quality 3C-SiC layers were deposited onto the opened SiO 2 mask areas. This was shown by REM pictures and by removal of the SiO 2 layers in wet HF-etchant after the deposition. The selectively deposited 3C-SiC-structures were grown at a rate of 4.4 μm/h.
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