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Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

2014; American Institute of Physics; Volume: 104; Issue: 1 Linguagem: Inglês

10.1063/1.4857616

ISSN

1520-8842

Autores

Wangyang Fu, Maria El Abbassi, T. Hasler, Minkyung Jung, M. Steinacher, Michel Calame, Christian Schönenberger, Gabriel Puebla‐Hellmann, S. Hellmüller, Thomas Ihn, Andreas Wallraff,

Tópico(s)

Quantum and electron transport phenomena

Resumo

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation W. Fu, M. El Abbassi, T. Hasler, M. Jung, M. Steinacher, M. Calame, C. Schönenberger, G. Puebla-Hellmann, S. Hellmüller, T. Ihn, A. Wallraff; Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications. Appl. Phys. Lett. 6 January 2014; 104 (1): 013102. https://doi.org/10.1063/1.4857616 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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