Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films
1999; Elsevier BV; Volume: 201-202; Linguagem: Inglês
10.1016/s0022-0248(98)01367-0
ISSN1873-5002
AutoresP. Vennéguès, N. Grandjean, J. Massies, F. Sèmond,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe microstructure of gas source molecular beam epitaxy GaN films deposited on (0 0 0 1) sapphire is studied by transmission electron microscopy. For a nucleation layer deposited at 500°C, high-quality materials, with only dislocations (density=5×109 cm−2) in the volume of the film, are obtained. For a nucleation layer deposited at 550°C, the resulting structural quality is poor. Inversion Domains and {112̄0} prismatic defects are observed.
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