Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles embedded in Si matrix
2003; American Institute of Physics; Volume: 94; Issue: 3 Linguagem: Inglês
10.1063/1.1590065
ISSN1520-8850
AutoresCheng Li, Takeo Ohtsuka, Y. Ozawa, Takashi Suemasu, Fumio Hasegawa,
Tópico(s)Semiconductor materials and devices
ResumoThe influence of a boron-doped silicon cap layer on the photoluminescence (PL) of β-FeSi2 particles embedded in a silicon p–n junction is investigated. PL is found to improve significantly by optimizing silicon growth temperature and boron concentration. Surface morphology is also analyzed by atomic force microscopy. Dislocations and point defects are found to be generated by oxygen incorporated into the heavily boron-doped silicon layer during the 14 h of thermal annealing at 900 °C, and are suggested to be responsible for the quenching of the 1.53 μm PL.
Referência(s)