Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristics
1986; American Institute of Physics; Volume: 59; Issue: 10 Linguagem: Inglês
10.1063/1.336790
ISSN1520-8850
AutoresNavin Chand, John F. Klem, T. Henderson, H. Morkoç̌,
Tópico(s)Nanowire Synthesis and Applications
ResumoOwing to surface-exchange reaction and diffusion of As and Ge species during crystal growth by molecular-beam epitaxy, the electrical characteristics of n-GaAs/p-Ge heterojunctions are found to be affected significantly. The junctions grown at temperatures higher than 500 °C become thyristorlike npnp structures. The junctions grown below 500 °C exhibited normal current–voltage characteristics with the p/n junction apparently displaced into the Ge.
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