The deposition of platinum‐containing tin oxide thin films by metal‐organic CVD
1995; Wiley; Volume: 1; Issue: 1 Linguagem: Inglês
10.1002/cvde.19950010105
ISSN1521-3862
AutoresDavid J. Houlton, Anthony C. Jones, P.W. Haycock, Edward W. Williams, J.W. Bull, Gary W. Critchlow,
Tópico(s)Analytical Chemistry and Sensors
ResumoThe metal oxide semiconductor SnO 2 has a range of important applications, such as in transparent and conducting coatings on glass, and in gas‐sensing devices. CVD has a number of advantages as the technique of choice for the deposition of SnO 2 thin films but development has in the past been hampered by the high toxicity of the available precursors and the necessity of adding an oxidant such as O 2 or H 2 O. Here, SnO 2 deposition from the relatively non‐toxic tetra‐ t ‐butoxide tin in the absence of added oxidant is reported. Platinum doping of the material is also discussed.
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