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Precursor Scavenging of Resistive Grain-Boundary Phase in 8 mol % Ytterbia-Stabilized Zirconia

2002; Institute of Physics; Volume: 149; Issue: 3 Linguagem: Inglês

10.1149/1.1446873

1945-7111

Jong‐Heun Lee, Toshiyuki Mori, Ji‐Guang Li, Takayasu Ikegami, John Drennan, Doh‐Yeon Kim,

Nuclear materials and radiation effects

The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via -derived scavenging, was heat-treated at 1250°C for ⩾20 h. The formation of a stable Si-containing phase such as during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C). © 2002 The Electrochemical Society. All rights reserved.