Optical and electronic properties of the electron beam resist poly(butene-1-sulfone)
1985; American Institute of Physics; Volume: 58; Issue: 11 Linguagem: Inglês
10.1063/1.335525
ISSN1520-8850
AutoresM. W. Williams, D. W. Young, J. C. Ashley, E. T. Arakawa,
Tópico(s)Semiconductor materials and devices
ResumoThe optical properties of thin films of poly(butene-1-sulfone), PBS, an electron beam resist, are presented for the range of photon energies from 2.5 to 39.0 eV. The density of these films is found to be (1.39 ± 0.02) g cm−3. A sum-rule calculation is used to demonstrate the overall consistency of the data obtained. The optical data are used to calculate inelastic electron mean-free paths in PBS as a function of incident electron energy from 100 to 10 000 eV.
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