Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy
2005; American Institute of Physics; Volume: 87; Issue: 10 Linguagem: Inglês
10.1063/1.2041823
ISSN1520-8842
AutoresJ. W. Pomeroy, Martin Kuball, D. J. Wallis, A.M. Keir, K.P. Hilton, R.S. Balmer, Michael J. Uren, Trevor Martin, P.J. Heard,
Tópico(s)Nanowire Synthesis and Applications
ResumoWe illustrate the use of micro-Raman mapping to study the local effect of defects on device temperature in active AlGaN∕GaN heterostructure field-effect transistors. Significant temperature rises in active devices, 50–100% above average device temperatures, were identified in the vicinity of defects. Measured temperature distributions were compared to finite difference simulations. Reduced thermal conductivity in the defect vicinity was found to be responsible for the local temperature rises in these devices, combined with possible changes in the current flow distribution.
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