Substitution reaction of surface adsorbed P atoms to as atoms in the GaP/GaAs atomic layer epitaxy
1998; Elsevier BV; Volume: 183; Issue: 1-2 Linguagem: Inglês
10.1016/s0022-0248(97)00387-4
ISSN1873-5002
AutoresTetsuya Taki, Takahide Nakajima, Akinori Koukitu, Hisashi Seki,
Tópico(s)Molecular Junctions and Nanostructures
ResumoThe substitution reaction of surface adsorbed phosphorus (P) atoms to arsenic (As) atoms in the GaP/GaAs system is studied using a halogen transport atomic layer epitaxy (ALE) under an atmospheric pressure. The rate equations for the substitution reaction are led from the dependencies on the As4 exposure time and partial pressure. Based on the results, we propose a mechanism consisting of two kinds of substitution. It is shown that the substitution reaction of surface adsorbed P atoms to As atoms more rapidly occurs, compared with that of surface adsorbed As atoms to P atoms.
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