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Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000; Institute of Physics; Volume: 39; Issue: 11R Linguagem: Inglês

10.1143/jjap.39.6170

1347-4065

Minho Kim, Sung‐Nam Lee, Nae‐Man Park, Seong-Ju Park,

ZnO doping and properties

A metalorganic molecular beam epitaxy (MOMBE) system equipped with a radio frequency plasma cell was employed to grow GaN films at a low temperature of 650°C. The structural and optical properties of GaN films were studied by X-ray diffraction, scanning electron microscope, and photoluminescence (PL). The GaN films were epitaxially grown on the nitridated sapphire substrate with a wurtzitic single crystalline phase. The atomic nitrogen flux was found to be closely related to the GaN growth, particularly in the crystal quality of the GaN layers. An efficient emission line, which is associated with the recombination of the free-excitions, was observed at 10 K PL and a strong bandedge emission was also obtained even at room temperature PL.