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Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field

1988; Institute of Physics; Volume: 27; Issue: 1R Linguagem: Inglês

10.1143/jjap.27.40

1347-4065

M. Ohnishi, H. Nishiwaki, Kenji Uchihashi, Kazuhiro Yoshida, Makoto Tanaka, K. Ninomiya, M. Nishikuni, Noboru Nakamura, Shinya Tsuda, Shoichi Nakano, Takehito Yazaki, Yukinori Kuwano,

Silicon Nanostructures and Photoluminescence

An rf plasma decomposition of SiH 4 under a magnetic field was investigated. It was confirmed by the optical emission spectra that a high-electron-density plasma can be produced under a magnetic field. High-quality a-Si films with a photosensitivity of σ ph /σ d of 7×10 5 were obtained at a high deposition rate of 10 Å/s under the magnetic field. The a-Si solar cells with i-layers deposited at a high deposition rate under a magnetic field have a higher open-circuit voltage and a higher conversion efficiency than those without the magnetic field; a conversion efficiency of 10.1% under AM1(100mW/cm 2 ) illumination was obtained at a deposition rate of 10 Å/s. The rf plasma decomposition of SiH 4 under a magnetic field is thought to be very suitable for fabricating a-Si solar cells with a high conversion efficiency at a high deposition rate.