Demonstration of a quantum cellular automata cell in a GaAs∕AlGaAs heterostructure
2007; American Institute of Physics; Volume: 91; Issue: 3 Linguagem: Inglês
10.1063/1.2759257
ISSN1520-8842
AutoresFrancisco Pérez-Martínez, I. Farrer, David V. Anderson, G. A. C. Jones, D. A. Ritchie, S. J. Chorley, C. G. Smith,
Tópico(s)Advanced Memory and Neural Computing
ResumoThe authors report on the experimental demonstration of a GaAs∕AlGaAs-based quantum cellular automata cell fabricated using electron beam lithographically defined gates. These surface metallic gates form a pair of double quantum dots, as well as a pair of quantum point contacts (QPCs) that act as noninvasive voltage probes. Measurements at cryogenic temperatures show that an electron transfer in the input dots induces the relocation of a single electron in the output dots. Using the QPCs they were also able to determine the operating limits of the cell.
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