Surface states and insulator traps at the Si3N4GaAs interface
1972; Elsevier BV; Volume: 15; Issue: 11 Linguagem: Inglês
10.1016/0038-1101(72)90042-1
ISSN1879-2405
AutoresJames A. Cooper, Edmund Ward, R. J. Schwartz,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoMIS capacitors were fabricated on p-type GaAs by pyrolytic deposition of a Si3N4 film using the silane-ammonia-excess hydrogen reaction. Thermal conversion of bulk GaAs was found to be a problem in this reaction. The interface properties were investigated using the MIS conductance technique, and a tunneling model is proposed which accurately accounts for the observed conductance in depletion. A novel feature of the model is the assumption of a large density of states distributed well beyond 10 Å into the bulk insulator. Difficulties encountered in the interpretation of results in weak inversion and weak accumulation are discussed.
Referência(s)