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Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

2006; American Institute of Physics; Volume: 89; Issue: 18 Linguagem: Inglês

10.1063/1.2378726

1520-8842

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto,

ZnO doping and properties

For n-type Si-doped AlN with a low Si doping concentration of 3×1017cm−2, a high room-temperature electron mobility of 426cm2V−1s−1 was achieved, and at 220K the mobility reached 730cm2V−1s−1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018cm−3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.