A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
1982; Institute of Physics; Volume: 21; Issue: 11A Linguagem: Inglês
10.1143/jjap.21.l709
ISSN1347-4065
AutoresYoichi Kawaguchi, Shinji Kawaji,
Tópico(s)Quantum and electron transport phenomena
ResumoHot-electron effect in Si(001) MOSFET's has been studied at 4.2 K and 1.1 K by use of negative magnetoresistance as a thermometer for electron temperature. Heat transfer from electron system to phonon system is explained by use of deformation potential constants in Si bulk. Possible ultimate electron mobility in Si MOSFET's is discussed.
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