Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
2007; American Institute of Physics; Volume: 90; Issue: 8 Linguagem: Inglês
10.1063/1.2591314
ISSN1520-8842
AutoresF. A. Yildirim, C. Ucurum, R. R. Schliewe, W. Bauhofer, Ronald M. Meixner, H. Goebel, Wolfgang H. Krautschneider,
Tópico(s)Semiconductor materials and devices
ResumoThe authors report on a solution-processed composite film based on poly(vinylidene fluoride/trifluoroethylene) copolymer and barium titanate (BT) nanopowder, to be used as ferroelectric high-κ gate insulation in organic field-effect transistors (OFETs). Flexible films of up to 50vol% BT powder content are produced by preparing homogeneous dispersion of the powder in the polymer solutions. The films exhibited high specific volume resistivities combined with dielectric constants of up to 51.5 at 1kHz. Low-voltage OFETs with ferroelectric hysteresis and good memory retention properties were demonstrated by using the composite films.
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