Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
2010; American Institute of Physics; Volume: 97; Issue: 1 Linguagem: Inglês
10.1063/1.3459137
ISSN1520-8842
AutoresHayato Takita, Hashimoto Norihiko, Cong Thanh Nguyen, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAs ultrathin films, such as ∼10 000 cm2/V s for ∼100 nm thickness and ∼7000 cm2/V s for ∼20 nm. These carrier mobilities are highest not only for thin films on flexible substrates but also for InAs thin films; higher than those of InAs films grown on GaAs(111)A and membranes fabricated from them.
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