Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
2008; Institute of Physics; Volume: 1; Linguagem: Inglês
10.1143/apex.1.101401
ISSN1882-0786
AutoresNorio Hirashita, Yoshihiko Moriyama, Shu Nakaharai, Toshifumi Irisawa, Naoharu Sugiyama, Shinichi Takagi,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoElectrical properties of Ge-rich SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) structures fabricated by Ge condensation process have been studied. The SGOI and GOI structures for Ge composition, xGe, larger than 0.4 exhibit p-type conduction. The hole density is found to rapidly increase from 1016 to 1018 cm-3 with an increase in xGe during the Ge condensation and to decrease down to low-1017 cm-3 when xGe reaches unity. Analyses of scanning spreading resistance microscopy have directly revealed that the SGOI and GOI structures are highly conductive along the crosshatched slip bands formed during the condensation, meaning that the holes are induced along the slip bands in SGOI and GOI films. As a result, it is concluded that the hole induced during the Ge condensation is strongly associated with the slip band formation.
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