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Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance

2010; American Institute of Physics; Volume: 96; Issue: 24 Linguagem: Inglês

10.1063/1.3454241

1520-8842

Chen-Guan Lee, Ananth Dodabalapur,

Transition Metal Oxide Nanomaterials

Solution-processed amorphous oxide semiconductors are attractive channel materials in thin-film transistors (TFTs) for low-cost electronics. We demonstrate improved performance and uniformity of solution-processed zinc–tin oxide (ZTO) TFTs by optimizing the prebake process for the ZTO precursor film. ZTO prebake process prearranges the dielectric/semiconductor interface and minimizes the performance variation caused by the uneven thermal distribution during annealing process. Prearranging the interface also reduces interfacial trap density and results in improved performance. A mobility of 27.3 cm2/V s, an on/off ratio of ∼107, and a subthreshold swing of 122 mV/decade have been obtained. Significant improvement in operational stability has also been observed.