Portal de Periódicos da CAPES

Artigo Acesso aberto Produção Nacional Revisado por pares

BIBTEX RIS

Stacking-dependent shear modes in trilayer graphene

2015; American Institute of Physics; Volume: 106; Issue: 4 Linguagem: Inglês

10.1063/1.4906579

1520-8842

Chun Hung Lui, Zhipeng Ye, Courtney Keiser, Eduardo B. Barros, Rui He,

Mechanical and Optical Resonators

We observe distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We find that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence is not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.