Morphology and growth rate oF β-SiC grown on (100) silicon by chemical vapor deposition
1989; Elsevier BV; Volume: 8; Issue: 6-7 Linguagem: Inglês
10.1016/0167-577x(89)90105-5
ISSN1873-4979
AutoresP. E. R. Nordquist, G. Kelner, M. L. Gipe, P. Klein,
Tópico(s)Thin-Film Transistor Technologies
ResumoThe growth rates and morphologies of β-SiC deposited on Si by reaction of C3H8 and SiH4 at 1350°C in hydrogen are determined by the CSi ratio in the gas stream. As CSi varies from 1.2 to 3.0, growth rate falls from 4.8 to 2.4 μm/h and surfaces become flatter and more uniform. Electrical properties of the films appear to be unaffected by CSi.
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