Artigo Acesso aberto Produção Nacional Revisado por pares

Sol-gel Er-doped SiO2–HfO2 planar waveguides: A viable system for 1.5 μm application

2002; American Institute of Physics; Volume: 81; Issue: 1 Linguagem: Inglês

10.1063/1.1489477

ISSN

1520-8842

Autores

Rogéria Rocha Gonçalves, G. Carturan, L. Zampedri, Maurizio Ferrari, M. Montagna, Alessandro Chiasera, Giancarlo C. Righini, S. Pelli, Sidney J. L. Ribeiro, Younès Messaddeq,

Tópico(s)

Photorefractive and Nonlinear Optics

Resumo

70SiO 2 – 30HfO 2 planar waveguides, doped with Er3+ concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the I413/2→I415/2 emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The I413/2 level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration.

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