Radiation Resistance of InP-Related Materials
1995; Institute of Physics; Volume: 34; Issue: 11R Linguagem: Inglês
10.1143/jjap.34.6222
ISSN1347-4065
AutoresMasafumi Yamaguchi, Tatsuya Takamoto, Eiji Ikeda, Hiroshi Kurita, Masamichi Ohmori, K. Ando, C. Vargas–Aburto,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoIrradiation effects of 1-MeV electrons on InP-related materials such as InP, InGaP and InGaAsP have been examined in comparison with those of GaAs. Superior radiation-resistance of InP-related materials and their devices compared to GaAs has been found in terms of minority-carrier diffusion length and properties of devices such as solar cells and light-emitting devices. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed.
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