Hydrogen neutralization of dopant in p-type Ga0.47In0.53As
1991; Elsevier BV; Volume: 170; Issue: 1-4 Linguagem: Inglês
10.1016/0921-4526(91)90156-9
ISSN1873-2135
AutoresB. Theys, Abdul Jalil, J. Chevallier, A. M. Huber, C. Grattepain, P. Hirtz, B. Pajot,
Tópico(s)Thin-Film Transistor Technologies
ResumoDiffusion of hydrogen has been performed in a series of zinc doped GaInAs layers using a RF hydrogen plasma. In highly doped (≈1019/cm3) materials, the free hole concentration decrease is accompanied by a significant increase of the hole mobility indicating a neutralization process of acceptors. Layers doped at a level of ≈1018/cm3 turn to n-type after hydrogenation. We also show that the hydrogen solubility in this material is fixed by the free hole density rather than by the hydrogen plasma conditions.
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