Artigo Revisado por pares

Indacenodithiophene Semiconducting Polymers for High-Performance, Air-Stable Transistors

2010; American Chemical Society; Volume: 132; Issue: 33 Linguagem: Inglês

10.1021/ja1049324

ISSN

1943-2984

Autores

Weimin Zhang, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael D. McGehee, Alberto Salleo, James Kirkpatrick, Raja Shahid Ashraf, Thomas D. Anthopoulos, Martin Heeney, Iain McCulloch,

Tópico(s)

Thin-Film Transistor Technologies

Resumo

High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.

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