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Elaboration of Bi2Se3 by metalorganic chemical vapour deposition

2002; Elsevier BV; Volume: 236; Issue: 1-3 Linguagem: Inglês

10.1016/s0022-0248(01)02095-4

1873-5002

Alain Giani, A. Al Bayaz, A. Foucaran, F. Pascal‐Delannoy, Alexandre Boyer,

Heusler alloys: electronic and magnetic properties

For the first time, Bi2Se3 thin films were elaborated by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth (TMBi) and diethylselenium (DESe) as metalorganic sources. The MOCVD elaboration of Bi2Se3 was carried out in a horizontal reactor for a substrate temperature (Tg) varying from 450°C to 500°C, a total hydrogen flow rate DT=3 l min−1, RVI/V ratio >14 and TMBi partial pressure lower than 1.10−4 atm. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure of the layers typical preferential c-orientation and confirm the hexagonal structure. The microprobe data indicate that the best stoichiometry of Bi2Se3 was achieved. These films always displayed n-type conduction, and the maximum value of thermoelectric power α was found to be close to −120 μV/K.