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A Chemical Etching Process to Obtain Clean InP {001} Surfaces

1986; Institute of Physics; Volume: 25; Issue: 8A Linguagem: Inglês

10.1143/jjap.25.l664

1347-4065

J. Massies, F. Turco, Jean-Pierre Contour,

Semiconductor materials and devices

We report on a new chemical preparation procedure of InP {001} substrates which results in clean, oxide free surfaces, without the need of a high temperature thermal desorption of oxided surface phases. It mainly consists of a deoxidation by HF-ethanol solution, performed on a spinner operated in a nitrogen dry box, after a standard chemical etching using H 2 SO 4 /H 2 O 2 /H 2 O mixture. It is shown that such chemically deoxided surfaces are obtained with the typical InP {001} surface reconstructions for a significantly lower annealing temperature than those prepared without this deoxidation step.