Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
2012; American Institute of Physics; Volume: 101; Issue: 12 Linguagem: Inglês
10.1063/1.4753993
ISSN1520-8842
AutoresShibin Li, Morgan E. Ware, Jiang Wu, Paul Minor, Zhiming Wang, Zhiming Wu, Yadong Jiang, Gregory J. Salamo,
Tópico(s)Metal and Thin Film Mechanics
ResumoWe propose a type of pn-junction not formed by impurity-doping, but rather by grading the Al composition in an AlxGa1−xN thin film, resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlxGa1−xN from 0% to x (x ≤ 30%) and back to 0% Al, a polarization induced pn-junction is formed, even in the absence of any impurity doping. X-ray diffraction reciprocal space maps are used to determine the strain state of the different graded composition samples. Polarization induced doping also provides a solution to the problem of p-type doping efficiency for III-nitrides.
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