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Preparation of µc-Si:H/a-Si:H Multilayers and Their Optoelectric Properties

1990; Institute of Physics; Volume: 29; Issue: 6R Linguagem: Inglês

10.1143/jjap.29.1027

1347-4065

Masami Nakata, Hajime Shirai, T. Namikawa, Isamu Shimizu,

Semiconductor materials and interfaces

A layered structure consisting of alternate sublayers of µc-Si:H and a-Si:H was fabricated by means of plasma enhanced CVD from fluorinated precursors, SiH n F m ( n + m ≤3), under the condition modified periodically by the addition of SiH n as an amorphousizing agent. The structure with repeated layers of 75 Å or less in thickness was confirmed by small-angle X-ray diffraction. High photoconductivity equivalent to that of a-Si:H was maintained in the layered structures in the period of 75 Å or less despite the marked increase in optical absorption in the near-IR region of 1.0 eV–1.5 eV resulting from the optical absorption of the µc-Si:H layers.