Fully Transfer Characteristic-Based Technique for Surface Potential and Subgap Density of States in p-Channel Polymer-Based TFTs
2013; Institute of Electrical and Electronics Engineers; Volume: 34; Issue: 12 Linguagem: Inglês
10.1109/led.2013.2280014
ISSN1558-0563
AutoresJae‐Wook Lee, Sungwoo Jun, Jaeman Jang, Hagyoul Bae, Hyeongjung Kim, Jong Won Chung, Sung‐Jin Choi, Dae Hwan Kim, Jiyoul Lee, Dong Myong Kim,
Tópico(s)Semiconductor materials and devices
ResumoWe report a fully subthreshold current-based technique for characterization of subgap density of states [DOS:g(E)] with consistent mapping of the surface potential (ψ S ) in p-channel polymer-based thin-film transistors (PTFTS). Initially, we propose a technique for extraction of the DOS over the bandgap using the gate voltage (V GS )-dependent ideality factor [m(V GS )] from the transfer characteristics of the PTFTs under subthreshold operation. We also propose a technique for a consistent nonlinear mapping of V GS to the subgap energy level by converting m(V GS ) to ψ S . Through combining the two methods, the exponential tail and deep g(E) are obtained to be N TD =1·1×10 17 [eV -1 ·cm -3 ], kT TD =0·035 [eV], N DD =9·8×10 16 [eV -1 ·cm -3 ], and kT DD =0·80 [eV] over the bandgap.
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