Direct water photoelectrolysis with patterned n-GaN
2007; American Institute of Physics; Volume: 91; Issue: 9 Linguagem: Inglês
10.1063/1.2769393
ISSN1520-8842
AutoresIchitaro Waki, Daniel A. Cohen, Rakesh Lal, Umesh K. Mishra, Steven P. DenBaars, Shuji Nakamura,
Tópico(s)Gas Sensing Nanomaterials and Sensors
ResumoDirect photoelectrolysis of water was observed using a structured n-GaN photoanode, aqueous NaOH solution, and platinum cathode. The structured n-GaN was formed by selective area regrowth using metal stripes defined by photolithography. Gas evolution from both the n-GaN anode and the platinum cathode was observed under UV irradiation without external bias. The metal stripes eliminated current crowding and the n-GaN regrowth increased specific surface area. As a result, distinct improvements in photocurrent were achieved. The origin of the photocurrent and the conversion efficiency are discussed based on water-splitting reactions and etching reactions.
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