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Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser

1989; IEEE Photonics Society; Volume: 25; Issue: 10 Linguagem: Inglês

10.1109/3.35718

1558-1713

H. C. Hsieh,

Advancements in Semiconductor Devices and Circuit Design

Assuming that the temperature dependence of the threshold current for pulsed operation is known, an analytical expression for the maximum heat-sink temperature, T/sub hm/, for CW operation of the laser can be derived. The maximum heat-sink temperature is expressed in terms of the characteristic temperature T/sub 0/, the room-temperature threshold current for pulsed operation I/sub 0/, the equivalent effective thermal resistance theta , and the equivalent effective series electrical resistance r of the device. It is shown that the values of T/sub hm/ can be enhanced by increasing the value of T/sub 0/ or by decreasing the values of I/sub 0/, theta , and r. >