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Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

2006; American Institute of Physics; Volume: 89; Issue: 5 Linguagem: Inglês

10.1063/1.2240110

1520-8842

Yu Yang, Lian Wang, He Yan, Shu Jin, Tobin J. Marks, Shuyou Li,

Thin-Film Transistor Technologies

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In2O3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6Ω∕◻, and the average optical transmittance is 87.1% in the 400–700nm region. The overall figure of merit (Φ=T10∕Rsheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.