Carrier capture and escape in In x Ga 1 − x A s</mml:…
1999; American Physical Society; Volume: 59; Issue: 7 Linguagem: Inglês
10.1103/physrevb.59.4630
ISSN1095-3795
Autores Tópico(s)Semiconductor Lasers and Optical Devices
ResumoWe have investigated photoexcited carrier dynamics in as-grown and intermixed ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ quantum dots and quantum wells by time-resolved photoluminescence with subpicosecond temporal resolution. Experiments were performed at high excitation in the temperature range 60--300 K. At lower temperatures, carrier lifetime in the dots is determined by radiative recombination, while at temperatures over 150 K carrier thermal emission becomes dominant. Carrier capture into the dots was found to be fast and governed by carrier-carrier scattering. In particular, at room temperature and high-excitation intensity, the carrier capture time of 0.72 ps was observed for the intermixed dots.
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