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Fabrication of transparent nanocrystalline InGaO 3 (ZnO) 2 thin films using a solution process

2010; Wiley; Volume: 207; Issue: 7 Linguagem: Inglês

10.1002/pssa.200983705

1862-6319

Kyung‐Ho Kim, Chan Yun Kim, Hyun Jae Kim,

Ga2O3 and related materials

Abstract We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3 (ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self‐solid phase reaction (S‐SPR). The nanocrystals began to form at a temperature of ∼300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc‐InGaO 3 (ZnO) 2 thin film was ∼92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3 (ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc‐InGaO 3 (ZnO) 2 thin film.