Threading Dislocations and Optical Properties of GaN and GaInN
2001; Wiley; Volume: 228; Issue: 2 Linguagem: Inglês
10.1002/1521-3951(200111)228
ISSN1521-3951
AutoresT. Miyajima, T. Hino, Shigetaka Tomiya, Katsunori Yanashima, Hiroshi Nakajima, Yasushi Nanishi, Akihiro Satake, Yasuaki Masumoto, Katsuhiro Akimoto, Tsutomu Kobayashi, Masao Ikeda,
Tópico(s)Ga2O3 and related materials
Resumophysica status solidi (b)Volume 228, Issue 2 p. 395-402 Original Paper Threading Dislocations and Optical Properties of GaN and GaInN T. Miyajima, T. Miyajima takao.miyajima@jp.sony.com Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorT. Hino, T. Hino Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, JapanSearch for more papers by this authorS. Tomiya, S. Tomiya Environment & Analysis Tech. Dept., Sony Corporation, 2-1-1 Shin-sakuragaoka, Yokohama, Kanagawa 240-0036, JapanSearch for more papers by this authorK. Yanashima, K. Yanashima Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorH. Nakajima, H. Nakajima Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorY. Nanishi, Y. Nanishi Dept. of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanSearch for more papers by this authorA. Satake, A. Satake Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, JapanSearch for more papers by this authorY. Masumoto, Y. Masumoto Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, JapanSearch for more papers by this authorK. Akimoto, K. Akimoto Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanSearch for more papers by this authorT. Kobayashi, T. Kobayashi Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorM. Ikeda, M. Ikeda Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, JapanSearch for more papers by this author T. Miyajima, T. Miyajima takao.miyajima@jp.sony.com Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorT. Hino, T. Hino Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, JapanSearch for more papers by this authorS. Tomiya, S. Tomiya Environment & Analysis Tech. Dept., Sony Corporation, 2-1-1 Shin-sakuragaoka, Yokohama, Kanagawa 240-0036, JapanSearch for more papers by this authorK. Yanashima, K. Yanashima Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorH. Nakajima, H. Nakajima Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorY. Nanishi, Y. Nanishi Dept. of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanSearch for more papers by this authorA. Satake, A. Satake Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, JapanSearch for more papers by this authorY. Masumoto, Y. Masumoto Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, JapanSearch for more papers by this authorK. Akimoto, K. Akimoto Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, JapanSearch for more papers by this authorT. Kobayashi, T. Kobayashi Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JapanSearch for more papers by this authorM. Ikeda, M. Ikeda Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, JapanSearch for more papers by this author First published: 13 November 2001 https://doi.org/10.1002/1521-3951(200111)228:2 3.0.CO;2-2Citations: 24AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract We categorized threading dislocations in GaN and GaInN multiple quantum wells and epitaxially lateral overgrown GaN into three types of line defects (edge, screw and mixed dislocations), and investigated the optical properties. It was confirmed by cathodoluminescence measurements that not only screw and mixed dislocations but also edge dislocations act as non-radiative centers in GaN. Epitaxial lateral overgrowth (ELO) technique can reduce the densities of all line-defects in a several μm wide wing region. Growth steps in the wing region were disturbed by the defects which were left in a seed region, and a complicated structure was formed at the surface of GaN and GaInN layers grown on ELO-GaN at low temperature. We believe that this surface structure formed by high supersaturation is a cause of In compositional spatial fluctuation and phase separation of GaInN alloy. Citing Literature Volume228, Issue2November 2001Pages 395-402 RelatedInformation
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