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Performance of electronic devices submitted to X-rays and high energy proton beams

2011; Elsevier BV; Volume: 273; Linguagem: Inglês

10.1016/j.nimb.2011.07.058

1872-9584

M. Guazzelli, K. H. Cirne, R.B.B. Santos, Salvador Pinillos Gimenez, N. H. Medina, N. Added, M.H. Tabacniks, M. D. L. Barbosa, L. E. Seixas, Wellington R. Melo, Jader A. De Lima,

Semiconductor materials and devices

In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor.