Epitaxial Growth of Full-Heusler Alloy Co$_2$MnSi Thin Films on MgO-Buffered MgO Substrates
2006; IEEE Magnetics Society; Volume: 42; Issue: 10 Linguagem: Inglês
10.1109/tmag.2006.878850
ISSN1941-0069
AutoresHiromichi Kijima, Takayuki Ishikawa, Takao Marukame, Hiroshi Koyama, Ken-ichi Matsuda, Tetsuya Uemura, M. Yamamoto,
Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoFull-Heusler alloy Co 2 MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at 600degC. X-ray pole figure measurements of the annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallized in the L2 1 structure. The annealed films had sufficiently flat surface morphologies with root-mean-square roughness of about 0.22 nm at a film thickness of 50 nm. The saturation magnetization of the annealed films was 4.5mu B /f.u. at 10 K, corresponding to about 90% of the Slater-Pauling value for CMS
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