Very long wavelength infrared type-II detectors operating at 80 K
2000; American Institute of Physics; Volume: 77; Issue: 11 Linguagem: Inglês
10.1063/1.1308528
ISSN1520-8842
AutoresHooman Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, Gail J. Brown, W. C. Mitchel, Y. S. Park,
Tópico(s)Spectroscopy and Laser Applications
ResumoWe report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc=17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.
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