Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth
2011; American Chemical Society; Volume: 11; Issue: 10 Linguagem: Inglês
10.1021/nl201980p
ISSN1530-6992
AutoresGang Han, Fethullah Güneş, Jung Jun Bae, Eun Sung Kim, Seung Jin Chae, Hyeon‐Jin Shin, Jae‐Young Choi, Didier Pribat, Young Hee Lee,
Tópico(s)Thermal properties of materials
ResumoWe report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat copper surface was prepared by using a chemical mechanical polishing method. At early growth stage, the density of graphene nucleation seeds from polished Cu film was much lower and the domain sizes of graphene flakes were larger than those from unpolished Cu film. At later growth stage, these domains were stitched together to form monolayer graphene, where the orientation of each domain crystal was unexpectedly not much different from each other. We also found that grain boundaries and intentionally formed scratched area play an important role for nucleation seeds. Although the best monolayer graphene was grown from polished Cu with a low sheet resistance of 260 Ω/sq, a small portion of multilayers were also formed near the impurity particles or locally protruded parts.
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