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Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

2013; Wiley; Volume: 210; Issue: 9 Linguagem: Inglês

10.1002/pssa.201329013

1862-6319

Zachary Lochner, Xiaohang Li, Tsung‐Ting Kao, Md. Mahbub Satter, Hee Jin Kim, Shyh‐Chiang Shen, P. Douglas Yoder, Jae‐Hyun Ryou, Russell D. Dupuis, Kewei Sun, Yong Wei, Ti Li, Alec M. Fischer, F. A. Ponce,

ZnO doping and properties

physica status solidi (a)Volume 210, Issue 9 p. 1768-1770 Original Paper Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Zachary Lochner, Zachary Lochner Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorXiao-Hang Li, Xiao-Hang Li Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorTsung-Ting Kao, Tsung-Ting Kao Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorMd. Mahbub Satter, Md. Mahbub Satter Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorHee Jin Kim, Hee Jin Kim Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorShyh-Chiang Shen, Shyh-Chiang Shen Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorP. Douglas Yoder, P. Douglas Yoder Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorJae-Hyun Ryou, Jae-Hyun Ryou Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA Department of Mechanical Engineering, University of Houston, Houston, TX, USASearch for more papers by this authorRussell D. Dupuis, Corresponding Author Russell D. Dupuis Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USACorresponding author: e-mail [email protected], Phone: +1 404 385 6094, Fax: +1 404 385 6096Search for more papers by this authorKewei Sun, Kewei Sun Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorYong Wei, Yong Wei Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorTi Li, Ti Li Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorAlec Fischer, Alec Fischer Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorFernando A. Ponce, Fernando A. Ponce Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this author Zachary Lochner, Zachary Lochner Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorXiao-Hang Li, Xiao-Hang Li Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorTsung-Ting Kao, Tsung-Ting Kao Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorMd. Mahbub Satter, Md. Mahbub Satter Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorHee Jin Kim, Hee Jin Kim Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorShyh-Chiang Shen, Shyh-Chiang Shen Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorP. Douglas Yoder, P. Douglas Yoder Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USASearch for more papers by this authorJae-Hyun Ryou, Jae-Hyun Ryou Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA Department of Mechanical Engineering, University of Houston, Houston, TX, USASearch for more papers by this authorRussell D. Dupuis, Corresponding Author Russell D. Dupuis Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USACorresponding author: e-mail [email protected], Phone: +1 404 385 6094, Fax: +1 404 385 6096Search for more papers by this authorKewei Sun, Kewei Sun Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorYong Wei, Yong Wei Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorTi Li, Ti Li Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorAlec Fischer, Alec Fischer Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this authorFernando A. Ponce, Fernando A. Ponce Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USASearch for more papers by this author First published: 21 May 2013 https://doi.org/10.1002/pssa.201329013Citations: 6Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa1−xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm−2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included. References 1 T. Cutler and J. Zimmerman, Anim. Health Res. Rev. 12, 15 (2011). 2 D. Parthenopoulos and P. Rentzepis, Science 245, 843 (1989). 3 P. Parbrook and T. Wang, IEEE J. Sel. Top. Quantum Electron 17, 1402 (2011). 4 Y. Ohba, K. Kaneko, H. Katsuno, and M. Kushibe, Appl. Phys. Express 1, 101101 (2008). 5 V. Adivarahan, A. Heidari, B. Zhang, Q. Fareed, S. Hwang, M. Islam, and A. Khan, Appl. Phys. Express 2, 102101 (2009). 6 S. Fujikawa and H. 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