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Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

2005; American Institute of Physics; Volume: 86; Issue: 6 Linguagem: Inglês

10.1063/1.1862344

1520-8842

Soichiro Tsujino, A. Borak, E. Müller, Maxi Scheinert, C.V. Falub, H. Sigg, Detlev Grützmacher, Marcella Giovannini, Jérôme Faist,

Advancements in Semiconductor Devices and Circuit Design

The effect of intrasubband interface roughness scattering on intersubband transition linewidths in double-quantum-well and quantum-cascade (QC) structures is studied. In n-GaInAs∕AlInAs structures, the calculated ratios between the linewidths of the spatially vertical and diagonal transitions agree with the experimental values. In p-Si∕Si0.2Ge0.8 QC structures, the experimentally observed linewidth is a factor of 4–7 smaller than the predicted value. However, by assuming a vertical interface correlation between adjacent interfaces separated by less than ∼1.5nm, the theory reproduces the experiment. Transmission electron microscopy of the SiGe QC sample reveals this vertical correlation, supporting the model.